Frequency rapid scan is one of the novel methods in EPR spectroscopy, which can be used to determine relaxation time of a spin system. Unlike pulsed methods, rapid scan is not limited by dead time of detector and does not require high power microwave sources. Aim of this project is to apply a rapid scan method on high frequency EPR spectrometer to investigate impurities in semiconductors, with focus of silicon carbide.
Supervisor: doc. Petr Neugebauer